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  Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface

Heinemann, M., & Scheffler, M. (1992). Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science, 56-58, 628-631. doi:10.1016/0169-4332(92)90312-L.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-222E-2 Version Permalink: https://hdl.handle.net/21.11116/0000-0008-BF6E-7
Genre: Journal Article

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Appl-Surface-Sci-56to58-628-1992.pdf (Any fulltext), 796KB
 
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1992
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Elsevier
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 Creators:
Heinemann, Martina1, Author           
Scheffler, Matthias1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1992
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/0169-4332(92)90312-L
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Title: Applied Surface Science
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier B.V.
Pages: - Volume / Issue: 56-58 Sequence Number: - Start / End Page: 628 - 631 Identifier: ISSN: 0169-4332
CoNE: https://pure.mpg.de/cone/journals/resource/954928576736