Silicon Donor in Gallium Arsenide and its Relation to DX Centers

Dabrowski, J.; Scheffler, M.; Strehlow, R.; Anastassakis, E. M.; Joannopoulos, J. D.

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Silicon Donor in Gallium Arsenide and its Relation to DX Centers

Dabrowski, J., Scheffler, M., & Strehlow, R. (1990). Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), 489-492.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22D4-C Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22D5-A

Genre: Journal Article

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Creators:
Dabrowski, J.¹, Author
Scheffler, M.², Author
Strehlow, R., Author
Anastassakis, E. M., Editor
Joannopoulos, J. D., Editor

Affiliations:
1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1990

Publication Status: Issued

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Identifiers: eDoc: 2074

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Title: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)

Source Genre: Journal

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 489 - 492 Identifier: -