Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights 
for Alkalis Adsorbed on GaAs(110)

Hebenstreit, J.; Heinemann, M.; Scheffler, Matthias; Anastassakis, E. M.; Joannopoulos, J. D.

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Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110)

Hebenstreit, J., Heinemann, M., & Scheffler, M. (1990). Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), 215-218.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22DE-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22E0-0

Genre: Journal Article

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Creators:
Hebenstreit, J.¹, Author
Heinemann, M.², Author
Scheffler, Matthias², Author
Anastassakis, E. M., Editor
Joannopoulos, J. D., Editor

Affiliations:
1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1990

Publication Status: Issued

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Title: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)

Source Genre: Journal

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 215 - 218 Identifier: -