Anion-Antisite-like Defects in III-V Compounds

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.; Anastassakis, E. M.; Joannopoulos, J. D.

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Anion-Antisite-like Defects in III-V Compounds

Caldas, M. J., Dabrowski, J., Fazzio, A., & Scheffler, M. (1990). Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20), 469-472.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22EE-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-22EF-1

Genre: Journal Article

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Creators:
Caldas, M. J.¹, Author
Dabrowski, J., Author
Fazzio, A., Author
Scheffler, M.², Author
Anastassakis, E. M., Editor
Joannopoulos, J. D., Editor

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1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1990

Publication Status: Issued

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Title: Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20)

Source Genre: Journal

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 469 - 472 Identifier: -