The isolated arsenic antisite defect in GaAs and the properties of EL2

Dabrowski, J.; Scheffler, M.

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The isolated arsenic antisite defect in GaAs and the properties of EL2

Dabrowski, J., & Scheffler, M. (1989). The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B, 40, 10391-10401.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-231A-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-231A-2

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Creators:
Dabrowski, J.¹, Author
Scheffler, M.², Author

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1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1989

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Title: Physical Review B

Source Genre: Journal

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Pages: - Volume / Issue: 40 Sequence Number: - Start / End Page: 10391 - 10401 Identifier: -