Electronic structure calculation of 3d and 4d transition metal point defects in 
silicon

Beeler, F.; Andersen, O. K.; Scheffler, M.; Engstroem, O.

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Electronic structure calculation of 3d and 4d transition metal point defects in silicon

Beeler, F., Andersen, O. K., & Scheffler, M. (1987). Electronic structure calculation of 3d and 4d transition metal point defects in silicon. Proc. 18th Int. Conf. on the Physics of Semiconductors, 875-878.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-233B-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-233C-5

Genre: Journal Article

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Creators:
Beeler, F.¹, Author
Andersen, O. K., Author
Scheffler, M.², Author
Engstroem, O., Editor

Affiliations:
1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1987

Publication Status: Issued

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Identifiers: eDoc: 2888

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Title: Proc. 18th Int. Conf. on the Physics of Semiconductors

Source Genre: Journal

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 875 - 878 Identifier: -