No large lattice relaxations around the arsenic antisite in GaAs

Bachelet, G. B.; Scheffler, M.; Chadi, J. D.; Harrison, W. A.

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No large lattice relaxations around the arsenic antisite in GaAs

Bachelet, G. B., & Scheffler, M. (1985). No large lattice relaxations around the arsenic antisite in GaAs. Proc. 17th Int. Conf. on the Physics of Semiconductors, 755-760.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-234B-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-234C-1

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Creators:
Bachelet, G. B.¹, Author
Scheffler, M.², Author
Chadi, J. D., Editor
Harrison, W. A., Editor

Affiliations:
1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1985

Publication Status: Issued

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Title: Proc. 17th Int. Conf. on the Physics of Semiconductors

Source Genre: Journal

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 755 - 760 Identifier: -