Tractable approach for calculating lattice distortions around simple defects in 
semiconductors: Application to the single donor Ge in GaP

Scheffler, M.; Vigneron, J. P.; Bachelet, G. B.

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Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP

Scheffler, M., Vigneron, J. P., & Bachelet, G. B. (1982). Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters, 49, 1765-1768.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-2379-E Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-2379-E

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Scheffler, M.¹, Author
Vigneron, J. P., Author
Bachelet, G. B., Author

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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 1982

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Title: Physical Review Letters

Source Genre: Journal

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Pages: - Volume / Issue: 49 Sequence Number: - Start / End Page: 1765 - 1768 Identifier: -