Electronic properties of strained bonds in amorphous silicon: The origin of the 
band-tail states

Schweitzer, L.; Scheffler, M.

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Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states

Schweitzer, L., & Scheffler, M. (n.d.). Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states. Proc. Optical Effects in Amorphous Semiconductors, 1984, 379-385.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-23B5-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-23B6-4

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Creators:
Schweitzer, L.¹, Author
Scheffler, M.², Author

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1Max Planck Society, ou_persistent13
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Title: Proc. Optical Effects in Amorphous Semiconductors

Source Genre: Journal

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Pages: - Volume / Issue: 1984 Sequence Number: - Start / End Page: 379 - 385 Identifier: -