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  Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices

Soltau, H., Krause, N., Meidinger, N., Hauff, D., Krisch, S., Strüder, L., et al. (1996). Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In C. Claeys (Ed.), Proceedings of the 4th International Symposium on High Purity Silicon (pp. 325-337). Electrochemical Society.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0011-ED52-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0011-ED54-0
Genre: Conference Paper

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soltau-defect96.pdf (Any fulltext), 866KB
 
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 Creators:
Soltau, H.1, Author              
Krause, N.2, Author              
Meidinger, N.1, Author              
Hauff, D.1, Author              
Krisch, S.1, Author              
Strüder, L.1, Author              
Zanthier, C. von1, Author              
Affiliations:
1High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society, ou_159890              
2Infrared and Submillimeter Astronomy, MPI for Extraterrestrial Physics, Max Planck Society, ou_159889              

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Language(s): eng - English
 Dates: 1996
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 315439
Other: 4545d
 Degree: -

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Title: 4th International Symposium on High Purity Silicon
Place of Event: San Antonio, TX, USA
Start-/End Date: 1996-10-06 - 1996-10-11

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Title: Proceedings of the 4th International Symposium on High Purity Silicon
Source Genre: Proceedings
 Creator(s):
Claeys, C.L., Editor
Affiliations:
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Publ. Info: Electrochemical Society
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 325 - 337 Identifier: ISBN: 1-5667-7156-0

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Title: Electrochemical Society Proceedings
Source Genre: Series
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Pages: - Volume / Issue: 96-13 Sequence Number: - Start / End Page: - Identifier: -