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Highly p-doped epitaxial graphene obtained by fluorine intercalation

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Walter,  Andrew L.
Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory;
Molecular Physics, Fritz Haber Institute, Max Planck Society;

Chang,  Young Jun
Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory;
Molecular Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21640

Horn,  Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Walter, A. L., Jeon, K.-J., Bostwick, A., Speck, F., Ostler, M., Seyller, T., et al. (2011). Highly p-doped epitaxial graphene obtained by fluorine intercalation. Applied Physics Letters, 98(18): 184102. doi:10.1063/1.3586256.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0012-1696-2
Abstract
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p ≈ 4.5×1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.