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Journal Article

The interaction of Xe and Xe + K with graphene


Ohta,  Taisuke
Advanced Light Source, Lawrence Berkeley National Laboratory;
Molecular Physics, Fritz Haber Institute, Max Planck Society;


Horn,  Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Bostwick, A., McChesney, J. L., Ohta, T., Emtsev, K. V., Seyller, T., Horn, K., et al. (2011). The interaction of Xe and Xe + K with graphene. Journal of Electron Spectroscopy and Related Phenomena, 183(1-3), 118-124. doi:10.1016/j.elspec.2010.05.003.

Cite as: https://hdl.handle.net/11858/00-001M-0000-000F-3C4D-E
We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on bare graphene, we determine the K contribution to trigonal warping and mass renormalization due to electron–phonon coupling. The former is found to be small but significant, while the latter is shown to be negligible. Thus, previously determined values of electron–phonon coupling for K on graphene are shown to be intrinsic to doped graphene and not determined by the proximity of K ions to the graphene.