Ultrafast dynamics of occupied quantum well states in Pb/Si(111)

Rettig, L.; Kirchmann, Patrick S.; Bovensiepen, Uwe

doi:10.1088/1367-2630/14/2/023047

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Ultrafast dynamics of occupied quantum well states in Pb/Si(111)

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Kirchmann, Patrick S.
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Rettig, L., Kirchmann, P. S., & Bovensiepen, U. (2012). Ultrafast dynamics of occupied quantum well states in Pb/Si(111). New Journal of Physics, 14(2): 023047. doi:10.1088/1367-2630/14/2/023047.

Cite as: https://hdl.handle.net/11858/00-001M-0000-000F-47D0-9

Abstract

We investigate the ultrafast electron dynamics of occupied quantum well states (QWSs) in Pb/Si(111) with time-resolved photoemission spectroscopy. We find an ultrafast increase in binding energy of the QWSs driven by the optical excitation, while the electronic system is in a non-equilibrium state. We explain this transient energetic stabilization in the photoexcited state by an ultrafast modification of the Fermi level pinning, triggered by charge transfer across the Pb/Si interface. In addition, we observe the excitation of a coherent surface phonon mode at a frequency of ~2 THz, which modulates the QWS binding energy.