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Vacancies in GaN bulk and nanowires: effect of self-interaction corrections

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Fuchs,  Martin
Theory, Fritz Haber Institute, Max Planck Society;

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Carter, D. J., Fuchs, M., & Stampfl, C. (2012). Vacancies in GaN bulk and nanowires: effect of self-interaction corrections. Journal of Physics: Condensed Matter, 24(25): 255801. doi:10.1088/0953-8984/24/25/255801.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000F-C65A-5
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