Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an 
external ring cavity

Brozek, Oliver Sascha; Quetschke, V.; Wicht, A.; Danzmann, Karsten

doi:10.1016/S0030-4018(97)00492-6

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Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity

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Danzmann, Karsten
Laser Interferometry & Gravitational Wave Astronomy, AEI-Hannover, MPI for Gravitational Physics, Max Planck Society;

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Citation

Brozek, O. S., Quetschke, V., Wicht, A., & Danzmann, K. (1998). Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. Optics Communications, 146(1-6), 141-146. doi:10.1016/S0030-4018(97)00492-6.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0013-5980-4

Abstract

We report on 50% conversion efficiency for frequency doubling of a 854 nm GaAlAs diode laser using a potassium niobate crystal in an external ring cavity. Frequency stabilization of the diode laser is achieved by direct optical feedback from the doubling cavity or from a grating in Littrow configuration. We determine 200 kHz linewidth from the measured spectral density of the frequency noise and from a beat signal measurement of two independent diode lasers. The blue output power of 7.8 mW shows rms-fluctuations of less than 0.6% in 1 MHz bandwidth.