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Influence of domain boundaries on polarity of GaN grown on sapphire

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Phillipp,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Schröder,  H.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Zhou, H., Phillipp, F., Schröder, H., & Bell, J. M. (2005). Influence of domain boundaries on polarity of GaN grown on sapphire. Applied Surface Science, 252, 483-487.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-2829-7
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