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Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect

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Spolenak,  R.
Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., et al. (2003). Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect. Journal of Applied Physics, 93(9), 5701-5706.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-2CB5-B
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