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Cracking of III-nitride multiple heterostructures grown by MOVPE on (0001)-6H-SiC and Al2O3

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Hasenkopf,  A.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Phillipp,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Hasenkopf, A., Phillipp, F., Moutchnik, G., Ivanov, A., & Scholz, F. (2003). Cracking of III-nitride multiple heterostructures grown by MOVPE on (0001)-6H-SiC and Al2O3. In A. Cullis, & P. Midgley (Eds.), Microscopy of Semiconducting Materials 2003 (pp. 355-358). London: Institute of Physics.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-2F1F-B
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