Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET 
structures

Katcki, J.; Ratajczak, J.; Laszcz, A.; Phillipp, F.; Dubois, E.; Larrieu, G.; Penaud, J.; Baie, X.

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Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

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Phillipp, F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Katcki, J., Ratajczak, J., Laszcz, A., Phillipp, F., Dubois, E., Larrieu, G., et al. (2003). Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures. In A. Cullis, & P. Midgley (Eds.), Microscopy of Semiconducting Materials 2003 (pp. 479-482). London: Institute of Physics.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-2F22-1

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