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Indentation of GaN: A study of the optical activity and strain state of extended defects

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Wagner,  T.
Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Jahn, U., Trampert, A., Wagner, T., Brandt, O., & Ploog, K. H. (2002). Indentation of GaN: A study of the optical activity and strain state of extended defects. Physica Status Solidi A-Applied Research, 192(1), 79-84.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-3064-8
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