Indentation of GaN: A study of the optical activity and strain state of 
extended defects

Jahn, U.; Trampert, A.; Wagner, T.; Brandt, O.; Ploog, K. H.

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Indentation of GaN: A study of the optical activity and strain state of extended defects

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Wagner, T.
Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Jahn, U., Trampert, A., Wagner, T., Brandt, O., & Ploog, K. H. (2002). Indentation of GaN: A study of the optical activity and strain state of extended defects. Physica Status Solidi A-Applied Research, 192(1), 79-84.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3064-8

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