Low temperature epitaxial growth of germanium islands in active regions of Si 
interband tunneling diods

Daschiel, M.; Müller, C.; Jin-Phillipp, N. Y.; Denker, U.; Schmidt, O. G.; Eberl, K.

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Low temperature epitaxial growth of germanium islands in active regions of Si interband tunneling diods

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Müller, C.
Former Dept. Materials Synthesis and Microstructure Design, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Jin-Phillipp, N. Y.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

Denker, U.
Max Planck Society;

Schmidt, O. G.
Max Planck Society;

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Daschiel, M., Müller, C., Jin-Phillipp, N. Y., Denker, U., Schmidt, O. G., & Eberl, K. (2002). Low temperature epitaxial growth of germanium islands in active regions of Si interband tunneling diods. Materials Science and Engineering B, 89, 106-110.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3296-6

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