Laterally ordered Ge/Si islands: a new concept for faster field effect 
transistors

Schmidt, O. G.; Denker, U.; Dashiell, M.; Jin-Phillipp, N. Y.; Eberl, K.; Schreiner, R.; Gräbeldinger, H.; Schweizer, H.; Christiansen, S.; Ernst, F.

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Laterally ordered Ge/Si islands: a new concept for faster field effect transistors

MPS-Authors

Schmidt, O. G.
Max Planck Society;

Denker, U.
Max Planck Society;

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Jin-Phillipp, N. Y.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Ernst, F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Schmidt, O. G., Denker, U., Dashiell, M., Jin-Phillipp, N. Y., Eberl, K., Schreiner, R., et al. (2002). Laterally ordered Ge/Si islands: a new concept for faster field effect transistors. Materials Science and Engineering B, 89, 101-105.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-32B0-A

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