Quantitative comparison between Auger electron spectroscopy and secondary ion 
mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs 
using the mixing-roughness-information depth model

Hofmann, S.; Rar, A.; Moon, D. W.; Yoshihara, K.

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Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

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Hofmann, S.
Dept. Phase Transformations; Thermodynamics and Kinetics, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Hofmann, S., Rar, A., Moon, D. W., & Yoshihara, K. (2001). Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model. Journal of Vacuum Science & Technology A, 19(4), 1111-1115.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-34A5-5

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