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Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors

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Ernst,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Wohl, G., Kasper, E., Hackbarth, T., Kibbel, H., Klose, M., & Ernst, F. (2001). Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors. Journal of Materials Science-Materials in Electronics, 12(4-6), 235-240.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-34E4-8
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