Ernst, F. Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Wohl, G., Kasper, E., Hackbarth, T., Kibbel, H., Klose, M., & Ernst, F. (2001). Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors. Journal of Materials Science-Materials in Electronics, 12(4-6), 235-240.