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Journal Article

Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

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Rühm,  A.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Jin-Phillipp,  N. Y.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Phillipp,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Schröder,  H.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Zhou, H., Rühm, A., Jin-Phillipp, N. Y., Phillipp, F., Gross, M., & Schröder, H. (2001). Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy. Journal of Materials Research, 16(1), 261-267.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-35B1-E
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