English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Conference Paper

Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 MeV-N+ ions

MPS-Authors
/persons/resource/persons76244

Voss,  T.
Dept. Theory of Inhomogeneous Condensed Matter, Max Planck Institute for Intelligent Systems, Max Planck Society;

/persons/resource/persons75471

Frank,  W.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Voss, T., Scharwaechter, P., & Frank, W. (2001). Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 MeV-N+ ions. In Y. Limoge (Ed.), Proceedings of DIMAT 2000, the Fifth International Conference on Diffusion in Materials (pp. 659-665). Uetikon-Zürich: Scitec Publications Ltd.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-35E9-1
Abstract
There is no abstract available