The relaxation rate of the magnetic moment of a shallow acceptor center as a 
function of impurity concentration in silicon

Mamedov, T. N.; Andrianov, D. G.; Herlach, D.; Gorelkin, V. N.; Gritsai, K. I.; Kormann, O.; Major, J.; Stoikov, A. V.; Zimmermann, U.

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The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon

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Kormann, O.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Major, J.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Mamedov, T. N., Andrianov, D. G., Herlach, D., Gorelkin, V. N., Gritsai, K. I., Kormann, O., et al. (2001). The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon. Journal of Experimental and Theoretical Physics, 92(6), 1004-1009.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3605-8

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