English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Conference Paper

Preparation and optical properties of Ge and C-induced Ge dots on Si

MPS-Authors
/persons/resource/persons75677

Kienzle,  O.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

/persons/resource/persons75448

Ernst,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

External Ressource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Eberl, K., Schmidt, O. G., Kienzle, O., & Ernst, F. (2000). Preparation and optical properties of Ge and C-induced Ge dots on Si. In S. Moss (Ed.), Semiconductor Quantum Dots (pp. 355-362). Warrendale, Pa.: MRS.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-378C-3
Abstract
There is no abstract available