Quantitative high-resolution electron microscopy studies of strain distribution 
and defect formation in III-V semiconductor quantum dots

Jin-Phillipp, N. Y.; Du, K.; Phillipp, F.

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Quantitative high-resolution electron microscopy studies of strain distribution and defect formation in III-V semiconductor quantum dots

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Jin-Phillipp, N. Y.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Du, K.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Phillipp, F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Jin-Phillipp, N. Y., Du, K., & Phillipp, F. (2000). Quantitative high-resolution electron microscopy studies of strain distribution and defect formation in III-V semiconductor quantum dots. In K. Yoshihara (Ed.), Fabrication and Characterization of Atomic Scale Structures. Proceedings of the 5th International Symposium on Advanced Physical Fields (pp. 33-39). Tokyo: National Research Institute for Metals.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-37C4-1

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