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Original and sputtering induced interface roughness in AES sputter depth profiling of SiO2/Ta2O5 multilayers

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Hofmann,  S.
Dept. Phase Transformations; Thermodynamics and Kinetics, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Rar, A., Kojima, I., Moon, D., & Hofmann, S. (1999). Original and sputtering induced interface roughness in AES sputter depth profiling of SiO2/Ta2O5 multilayers. Thin Solid Films, 355-356, 390-394.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-3A37-9
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