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Conference Paper

Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

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Phillipp,  F.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken,  P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Łaszcz, A., Czerwinski, A., Ratajczak, J., Szerling, A., Phillipp, F., van Aken, P. A., et al. (2010). Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers. Journal of Microscopy, 237(3), 347-351.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3B67-4
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