Strain mapping of 45 nm MOSFET by dark-field inline electron holography

Özdöl, V. B.; Koch, C. T.; van Aken, P. A.

doi:10.1017/S1431927610057090

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Strain mapping of 45 nm MOSFET by dark-field inline electron holography

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Özdöl, V. B.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Koch, C. T.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken, P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Özdöl, V. B., Koch, C. T., & van Aken, P. A. (2010). Strain mapping of 45 nm MOSFET by dark-field inline electron holography. Microscopy and Microanalysis, 16(Suppl. 2), 592-593.

引用: https://hdl.handle.net/11858/00-001M-0000-0010-3C13-7

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