A nondamaging electron microscopy approach to map In distribution in InGaN 
light-emitting diodes

Özdöl, V. B.; Koch, C. T.; van Aken, P. A.

doi:10.1063/1.3476285

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A nondamaging electron microscopy approach to map In distribution in InGaN light-emitting diodes

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Özdöl, V. B.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Koch, C. T.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken, P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Özdöl, V. B., Koch, C. T., & van Aken, P. A. (2010). A nondamaging electron microscopy approach to map In distribution in InGaN light-emitting diodes. Journal of Applied Physics, 108(5): 056103. doi:10.1063/1.3476285.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3C39-4

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