Band-gap measurements of direct and indirect semiconductors using monochromated 
electrons

Gu, L.; Srot, V.; Sigle, W.; Koch, C.; van Aken, P. A.; Scholz, F.; Thapa, S. B.; Kirchner, C.; Jetter, M.; Rühle, M.

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Band-gap measurements of direct and indirect semiconductors using monochromated electrons

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Gu, L.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Srot, V.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Sigle, W.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Koch, C.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken, P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Rühle, M.
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Gu, L., Srot, V., Sigle, W., Koch, C., van Aken, P. A., Scholz, F., et al. (2007). Band-gap measurements of direct and indirect semiconductors using monochromated electrons. Physical Review B, 75: 195214.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-43AF-5

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