Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 
nm resolution by backscattering near-field optical microscopy

Hillenbrand, R.; Keilmann, F.

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Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 nm resolution by backscattering near-field optical microscopy

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Hillenbrand, R.
Baumeister, Wolfgang / Molecular Structural Biology, Max Planck Institute of Biochemistry, Max Planck Society;

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Keilmann, F.
Baumeister, Wolfgang / Molecular Structural Biology, Max Planck Institute of Biochemistry, Max Planck Society;

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Hillenbrand, R., & Keilmann, F. (2002). Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 nm resolution by backscattering near-field optical microscopy. Applied Physics Letters, 80(1), 25-27.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-6FF4-4

Abstract

We report that three main constituents of nanosystems-metals, semiconductors, and dielectrics-can be categorically distinguished by their specific optical near-field contrast at 633 nm wavelength. The decisive property is the local dielectric constant as we show by calculations based on dipolar coupling theory. Experiments with Au/Si/PS(polystyrene) nanostructures using an apertureless scattering-type near-field optical microscope yield optical images at 10 nm resolution, with clear material contrast close to predicted levels. (C) 2002 American Institute of Physics.