Confined and chemically flexible grain boundaries in polycrystalline compound 
semiconductors

Abou-Ras, Daniel; Schmidt, Sebastian S.; Caballero, Raquel; Unold, Thomas; Schock, Hans-Werner; Koch, Christoph T.; Schaffer, Bernhard; Schaffer, Miroslava; Choi, Pyuck-Pa; Cojocaru-Miredin, Oana

doi:10.1002/aenm.201100764

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Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors

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Koch, Christoph T.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Abou-Ras, D., Schmidt, S. S., Caballero, R., Unold, T., Schock, H.-W., Koch, C. T., Schaffer, B., Schaffer, M., Choi, P.-P., & Cojocaru-Miredin, O. (2012). Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors. Advanced Energy Materials, 2(8), 992-998. doi:10.1002/aenm.201100764.

引用: https://hdl.handle.net/11858/00-001M-0000-000E-AADC-8

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