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Controlling the work function of ZnO and the energy-level alignment at the interface to organic semiconductors with a molecular electron acceptor

MPS-Authors
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Xu,  Yong
Theory, Fritz Haber Institute, Max Planck Society;

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Hofmann,  Oliver T.
Theory, Fritz Haber Institute, Max Planck Society;

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Rinke,  Patrick
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler,  Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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PhysRevB.87.155311.pdf
(Publisher version), 2MB

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Citation

Schlesinger, R., Xu, Y., Hofmann, O. T., Winkler, S., Frisch, J., Niederhausen, J., et al. (2013). Controlling the work function of ZnO and the energy-level alignment at the interface to organic semiconductors with a molecular electron acceptor. Physical Review B, 87(15): 155311. doi:10.1103/PhysRevB.87.155311.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000E-FA55-0
Abstract
We show that the work function (Φ) of ZnO can be increased by up to 2.8 eV by depositing the molecular electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). On metals, already much smaller Φ increases involve significant charge transfer to F4TCNQ. No indication of negatively charged F4TCNQ on ZnO is found by photoemission spectroscopy. This fundamental difference is explained by a simple electrostatic model that identifies the bulk doping and band bending in ZnO as key parameters. Varying Φ of the inorganic semiconductor enables tuning the energy-level alignment at ZnO/organic semiconductor interfaces.