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The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

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de Leeuw,  Dago M.
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Rocha, P. R. F., Kiazadeh, A., de Leeuw, D. M., Meskers, S. C. J., Verbakel, F., Taylor, D. M., et al. (2013). The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories. Journal of Applied Physics, 113(13): 134504. doi:10.1063/1.4799093.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000E-FC2B-B
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