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Uniaxial strain induced band splitting in semiconducting SrTiO3

MPG-Autoren

Chang,  Young Jun
Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory;
Physical Chemistry, Fritz Haber Institute, Max Planck Society;
Department of Physics, University of Seoul;

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Walter,  Andrew L.
Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory;
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Horn,  Karsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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PhysRevB.87.115212.pdf
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Zitation

Chang, Y. J., Khalsa, G., Moreschini, L., Walter, A. L., Bostwick, A., Horn, K., et al. (2013). Uniaxial strain induced band splitting in semiconducting SrTiO3. Physical Review B, 87(11): 115212. doi:10.1103/PhysRevB.87.115212.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0014-A2A7-0
Zusammenfassung
We use angle-resolved photoemission spectroscopy to study the influence of mechanically induced uniaxial strain on the electronic structure of the oxide semiconductor SrTiO3. We observe an orbital splitting between the Ti 3dyz and 3dxy bands, which are degenerate when unperturbed. Using the k·p method, we qualitatively explain the direction and the size of the observed energy splitting. Our comprehensive understanding of band splitting explains the strain induced mobility enhancement of electron-doped SrTiO33 in terms of band degeneracy breaking and reduced interband scattering. Our approach can be extended to differently strained oxide systems.