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Journal Article

Optical Absorption Measurements on Crystalline Silicon at 1550nm

MPS-Authors
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Lastzka,  Nico
Laser Interferometry & Gravitational Wave Astronomy, AEI-Hannover, MPI for Gravitational Physics, Max Planck Society;

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Steinlechner,  Sebastian
Laser Interferometry & Gravitational Wave Astronomy, AEI-Hannover, MPI for Gravitational Physics, Max Planck Society;

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Khalaidovski,  Alexander
Laser Interferometry & Gravitational Wave Astronomy, AEI-Hannover, MPI for Gravitational Physics, Max Planck Society;

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Schnabel,  Roman
Laser Interferometry & Gravitational Wave Astronomy, AEI-Hannover, MPI for Gravitational Physics, Max Planck Society;

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1210.7763.pdf
(Preprint), 356KB

CQG_30_9_095007.pdf
(Any fulltext), 576KB

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Citation

Steinlechner, J., Krüger, C., Lastzka, N., Steinlechner, S., Khalaidovski, A., & Schnabel, R. (2013). Optical Absorption Measurements on Crystalline Silicon at 1550nm. Classical and quantum gravity, 30(9): 095007. doi:10.1088/0264-9381/30/9/095007.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-16A8-4
Abstract
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension sample of crystalline silicon at a wavelength of 1550nm at room temperature. The absorption was measured in a monolithic cavity setup using the photo-thermal self-phase modulation technique. The result for the absorption coefficient of this float-zone sample with a specific resistivity of 11kOhm cm was measured to be \alpha_A=(264 +/- 39)ppm/cm.