Direct observation of band bending in the topological insulator Bi2Se3

ViolBarbosa, C. E.; Shekhar, C.; Yan, B.; Ouardi, S.; Ikenaga, E.; Fecher, G. H.; Felser, C.

doi:10.1103/PhysRevB.88.195128

アイテム詳細

登録内容を編集ファイル形式で保存

一時保存へ追加

タグ情報を表示リリース履歴を表示詳細要約

公開

学術論文

Direct observation of band bending in the topological insulator Bi₂Se₃

MPS-Authors

/persons/resource/persons126894

ViolBarbosa, C. E.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126847

Shekhar, C.
Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126916

Yan, B.
Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126789

Ouardi, S.
Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126599

Fecher, G. H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126601

Felser, C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

External Resource

There are no locators available

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

フルテキスト (公開)

公開されているフルテキストはありません

付随資料 (公開)

There is no public supplementary material available

引用

ViolBarbosa, C. E., Shekhar, C., Yan, B., Ouardi, S., Ikenaga, E., Fecher, G. H., & Felser, C. (2013). Direct observation of band bending in the topological insulator Bi₂Se₃. Physical Review B, 88(19):, pp. 195128-1-195128-4. doi:10.1103/PhysRevB.88.195128.

引用: https://hdl.handle.net/11858/00-001M-0000-0015-1E1E-D

要旨

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23-0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.