Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films

Köhler, A.; Knez, I.; Ebke, D.; Felser, C.; Parkin, S. S. P.

doi:10.1063/1.4825278

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Loss of anisotropy in strained ultrathin epitaxial L1₀ Mn-Ga films

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Köhler, A.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ebke, D.
Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Köhler, A., Knez, I., Ebke, D., Felser, C., & Parkin, S. S. P. (2013). Loss of anisotropy in strained ultrathin epitaxial L1₀ Mn-Ga films. Applied Physics Letters, 103(16): 162406, pp. 1-4. doi:10.1063/1.4825278.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-1A90-5

Abstract

We have investigated the magnetization and loss of anisotropy in ultrathin strained and unstrained Mn-Ga films at room temperature. Two Mn-Ga compositions, one of which is doped with Co, were grown on Cr buffered MgO (001) substrates. Films with a thickness below 10 nm are highly strained and the ratio c/a vs. thickness is depending on composition. The perpendicular magnetic anisotropy is shown to be drastically reduced with decreasing thickness and increasing strain. These findings should be considered when generalizing and downscaling results obtained from films > 20 nm. The strain can effectively be reduced by introducing an additional Pt buffer and thus maintaining a high perpendicular magnetic anisotropy for a thickness as low as 6 nm. (C) 2013 AIP Publishing LLC.