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Identifying the Electronic Character and Role of the Mn States in the Valence Band of (Ga,Mn)As

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Fecher,  G. H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Stryhanyuk,  H.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Fujii, J., Salles, B. R., Sperl, M., Ueda, S., Kobata, M., Kobayashi, K., et al. (2013). Identifying the Electronic Character and Role of the Mn States in the Valence Band of (Ga,Mn)As. Physical Review Letters, 111(9): 097201, pp. 097201-1-097201-5. doi:10.1103/PhysRevLett.111.097201.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-1E6E-A
Abstract
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.