Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr
0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

Kozina, X.; Jaeger, T.; Ouardi, S.; Gloskowskij, A.; Stryganyuk, G.; Jakob, G.; Sugiyama, T.; Ikenaga, E.; Fecher, G. H.; Felser, C.

doi:10.1063/1.3665621

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Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr_0.5Hf_0.5Sn thin films by hard x-ray photoelectron spectroscopy

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Ouardi, S.
Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher, G. H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Kozina, X., Jaeger, T., Ouardi, S., Gloskowskij, A., Stryganyuk, G., Jakob, G., et al. (2011). Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr_0.5Hf_0.5Sn thin films by hard x-ray photoelectron spectroscopy. Applied Physics Letters, 99(22): 221908, pp. 221908-1-221908-3. doi:10.1063/1.3665621.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-2194-A

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