Electronic doping of graphene by deposited transition metal atoms

Santos, J. E.; Peres, N. M. R.; Lopes dos Santos, J. M. B.; Castro Neto, A. H.

doi:10.1103/PhysRevB.84.085430

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Electronic doping of graphene by deposited transition metal atoms

MPS-Authors

/persons/resource/persons126825

Santos, J. E.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Santos, J. E., Peres, N. M. R., Lopes dos Santos, J. M. B., & Castro Neto, A. H. (2011). Electronic doping of graphene by deposited transition metal atoms. Physical Review B, 84(8): 085430, pp. 085430-1-085430-15. doi:10.1103/PhysRevB.84.085430.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-2206-4

Abstract

There is no abstract available