Skyrmion lattice in the doped semiconductor Fe1-xCoxSi

Münzer, W.; Neubauer, A.; Adams, T.; Mühlbauer, S.; Franz, C.; Jonietz, F.; Georgii, R.; Böni, P.; Pedersen, B.; Schmidt, M.; Rosch, A.; Pfleiderer, C.

doi:10.1103/PhysRevB.81.041203

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Skyrmion lattice in the doped semiconductor Fe_1-xCo_xSi

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Schmidt, M.
Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Münzer, W., Neubauer, A., Adams, T., Mühlbauer, S., Franz, C., Jonietz, F., et al. (2010). Skyrmion lattice in the doped semiconductor Fe_1-xCo_xSi. Physical Review B, 81: 041203, pp. 041203-1-041203-4. doi:10.1103/PhysRevB.81.041203.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-250C-9

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