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Low-temperature specific heat for off- and near-stoichiometric UAsSe

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Cichorek,  T.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Gegenwart,  P.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Lang,  M.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Steglich,  F.
Frank Steglich, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Cichorek, T., Henkie, Z., Wojakowski, A., Pietraszko, A., Gegenwart, P., Lang, M., et al. (2002). Low-temperature specific heat for off- and near-stoichiometric UAsSe. Solid State Communications, 121(12), 647-651. doi:10.1016/S0038-1098(02)00067-4.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-31CB-2
Abstract
Two UAsSe single crystals with slight variations of the As/Se content ratio have been investigated. The development of the low-T upturn in the resistivity is accompanied by smooth decrease of the Curie temperature. The sample with T-C = 116.9 K and almost invisible upturn could be regarded as a near- stoichiometric, slightly disordered one, whereas the specimen with T-C = 101.5 K appears to be an off-stoichiometric, more strongly disordered one. Clear differences between both electronic and lattice contributions to the specific heat for off- and near-stoichiometric UAsSe crystals have also been found. We ascribe the smaller low-T specific heat for the off- stoichiometric sample in comparison to the near-stoichiometric one to a weaker hybridization between 5f and conduction- electron states accompanied by the relative shift of 5f band with regard to E-F. (C) 2002 Elsevier Science Ltd. All rights reserved.