Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of 
surface kinetic and thermodynamic interdiffusion mechanisms

Malachias, A.; Stoffel, M.; Schmidbauer, M.; Schulli, T. U.; Medeiros-Ribeiro, G.; Schmidt, O. G.; Magalhaes-Paniago, R.; Metzger, T. H.

doi:10.1103/PhysRevB.82.035307

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Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms

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Metzger, T. H.
Biomaterialien, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

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Malachias, A., Stoffel, M., Schmidbauer, M., Schulli, T. U., Medeiros-Ribeiro, G., Schmidt, O. G., et al. (2010). Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms. Physical Review B, 82(3): 035307. doi:10.1103/PhysRevB.82.035307.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-4B43-A

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