Giant negative magnetoresistance in GdI2

Ahn, K.; Felser, C.; Seshadri, R.; Kremer, R. K.; Simon, A.

doi:10.1016/S0925-8388(00)00668-X

アイテム詳細

登録内容を編集ファイル形式で保存

一時保存へ追加

タグ情報を表示リリース履歴を表示詳細要約

公開

学術論文

Giant negative magnetoresistance in GdI₂

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

There are no locators available

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

フルテキスト (公開)

公開されているフルテキストはありません

付随資料 (公開)

There is no public supplementary material available

引用

Ahn, K., Felser, C., Seshadri, R., Kremer, R. K., & Simon, A. (2000). Giant negative magnetoresistance in GdI₂. Journal of Alloys and Compounds, 303, 252-256. doi:10.1016/S0925-8388(00)00668-X.

引用: https://hdl.handle.net/11858/00-001M-0000-0018-56EF-5

要旨

GdI2 is a layered d(1) compound which is isostructural with and nominally isoelectronic to the superconductors 2H-TaS2 and 2H-NbSe2. GdI2 orders ferromagnetically at 276(2) K and displays large negative magnetoresistance similar to 70% at 7 T close to room temperature. At 10 K the saturation magnetization is 7.33(5) mu(B) in good agreement with the value predicted from spin polarized band structure calculations. (C) 2000 Elsevier Science S.A. All rights reserved.